Ушбу ишга иқтибос қилган ишлар

3 та иш

Иш: Проблемы, связанные с <i>p—n</i>-переходами в кремнии

1. Peculiarities of radiation-induced defect formation in nanocrystals embedded in a solid matrix

   Б. Л. Оксенгендлер, N. N. Turaeva, С. Е. Максимов +1

   МақолаHigh-pressure geophysics and materialsJournal of Experimental and Theoretical Physics20107 иқтибос

   ABIABI:AkademIndex/openalex/2026.other.278857

2. Quantum yield of current carriers excited by electron beams and electron penetration depth in thin GaP films

   S. A. Azimov, D. A. Aronov, V. M. Rubinov +1

   МақолаSemiconductor materials and interfacesphysica status solidi (a)19832 иқтибос

   ABIABI:AkademIndex/openalex/1983.article.000065

3. Electronic theory of irradiation-induced disoerdering and annealing in semiconductors

   A. T. Mamadalimov, Б. Л. Оксенгендлер, N. N. Turaeva

   МақолаSemiconductor Quantum Structures and DevicesRussian Physics Journal20060 иқтибос

   ABIABI:AkademIndex/openalex/2006.article.000236