Baric Impurity Effects in Silicon

On the basis of thermodynamic considerations the external pressure P is shown to lead to the dissociation of impurity precipitates available in semiconductor materials. The condition of the dissociation is Ed = Pνd, Ed (νd) being the formation energy (volume) of a precipitate. The baric dissociation of precipitates is found experimentally in silicon with nickel and gadolinium impurities and the “surface precipitates” of various origins, revealed successively as the pressure increases, are found in silicon Schottky barriers and metal-dielectric-semiconductor structures. Electron-microscopic and X-ray diffraction investigations of Si〈Ni〉 enable us to establish a precipitate multilayer structure consisting mainly of a nickel-silicon set. [Russian Text Ignored.]

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