Ушбу ишга иқтибос қилган ишлар

3 та иш

Иш: Precipitation of Cu and Ni in n- and p-type Czochralski-grown silicon characterized by photoluminescence imaging

1. Decay of Impurity Clusters of Nickel and Cobalt Atoms in Silicon under the Influence of Pressure

   N. A. Turgunov, Elmurod Kh. Berkinov, D. Kh. Mamajonova

   МақолаSilicon and Solar Cell TechnologiesJournal of Nano- and Electronic Physics20218 иқтибос

   ABIABI:AkademIndex/openalex/2026.other.279523

2. The Effect of Thermal Annealing on the Electrophysical Properties of Samples n-Si<Ni,Сu>

   N. A. Turgunov, Elmurod Kh. Berkinov, R.M. Turmanova

   МақолаSilicon and Solar Cell TechnologiesEast European Journal of Physics20238 иқтибос

   ABIABI:AkademIndex/openalex/2026.other.279528

3. Influence of Accumulation of Impurity Atoms Ni and Fe on the Electrophysical Properties of Si Single Crystals

   N. A. Turgunov, Sh. K. Akbarov, N. B. Khaytimmetov +1

   МақолаSemiconductor materials and interfacesJournal of Nano- and Electronic Physics20240 иқтибос

   ABIABI:AkademIndex/openalex/2024.article.003369