Ушбу ишга иқтибос қилган ишлар

2 та иш

Иш: Strain-induced the dark current characteristics in InAs/GaSb type-II superlattice for mid-wave detector

1. A Surface Study of Si Doped Simultaneously with Ga and Sb

   X.M. Iliyev, Sobir B. Isamov, B. O. Isakov +2

   МақолаSemiconductor Quantum Structures and DevicesEast European Journal of Physics20237 иқтибос

   ABIABI:AkademIndex/openalex/2023.article.001190

2. Effect of GaSb Compound on Silicon Bandgap Energy

   Х. М. Илиев, Н. Ф. Зикриллаев, K. S. Ayupov +4

   МақолаSemiconductor materials and interfacesJournal of Nano- and Electronic Physics20241 иқтибос

   ABIABI:AkademIndex/openalex/2024.article.002963