Ушбу ишга иқтибос қилган ишлар

2 та иш

Иш: X-ray diffraction study of GaSb grown by molecular beam epitaxy on silicon substrates

1. X-Ray Diffraction and Raman Spectroscopy Analyses of GaSb-Enriched Si Surface Formed by Applying Diffusion Doping Technique

   Xalmurat M. Iliyev, В. Б. Оджаев, Sobir B. Isamov +5

   МақолаSilicon Nanostructures and PhotoluminescenceEast European Journal of Physics20236 иқтибос

   ABIABI:AkademIndex/openalex/2023.article.001215

2. Effect of GaSb Compound on Silicon Bandgap Energy

   Х. М. Илиев, Н. Ф. Зикриллаев, K. S. Ayupov +4

   МақолаSemiconductor materials and interfacesJournal of Nano- and Electronic Physics20241 иқтибос

   ABIABI:AkademIndex/openalex/2024.article.002963