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Ушбу иш иқтибос қилган ишлар

20 та иш

Иш: Photosensitivity of pSi-n(Si2)1–x–y(Ge2) x (ZnSe) y heterostructures with quantum dots

  1. Liquid-phase epitaxy of solid solutions (Ge2)1−x(ZnSe)x

    А. С. Саидов, A. Sh. Razzakov, V.A. Risaeva +1

    МақолаChalcogenide Semiconductor Thin FilmsMaterials Chemistry and Physics200125 иқтибос
    ABI

  2. Efficiency improvements of silicon solar cells by the impurity photovoltaic effect

    Mark Keevers, Martin A. Green

    Мақола199422 иқтибос
    ABI

  3. Increasing the Efficiency of Ideal Solar Cells by Photon Induced Transitions at Intermediate Levels

    A. Ĺuque, Antonio Martı́

    Мақола199720 иқтибос
    ABI

  4. Quantum dot solar cells

    Arthur J. Nozik

    Мақола200210 иқтибос
    ABI

  5. Direct solar conversion to electricity nanoscale effects in pSi–n(Si2)1–x (ZnSe) x (0 ≤ x ≤ 0.01) of solar cells

    А. С. Саидов, K. A. Amonov, B. R. Kutlimurotov

    МақолаSemiconductor materials and interfacesApplied Solar Energy20166 иқтибос
    ABI

  6. Сарлавҳасиз

    Бошқа5 иқтибос
    ABI

  7. Specific features of the epitaxial growth of narrow-gap InSb quantum dots on an InAs substrate

    K. D. Moiseev, Ya. A. Parkhomenko, Е. В. Гущина +4

    Мақола20094 иқтибос
    ABI

  8. Thermally activated resonance tunneling in asymmetric systems of CdSe/ZnSe double quantum wells with self-assembled quantum dots

    A. Reznitsky, A. A. Klochikhin, M. V. Eremenko

    Мақола20143 иқтибос
    ABI

  9. Effect of a low-temperature-grown GaAs layer on InAs quantum-dot photoluminescence

    A. Kosarev, V. V. Chaldyshev, В. В. Преображенский +2

    Мақола20163 иқтибос
    ABI

  10. High-efficiency silicon solar cells and prospects for their improvement

    N. M. Bordina, G.M. Grigor’eva, G. S. Daletskii +2

    Мақола19823 иқтибос
    ABI

  11. AlGaAs/GaAs photovoltaic cells with an array of InGaAs QDs

    S. A. Blokhin, A. V. Sakharov, A. M. Nadtochy +9

    Мақола20093 иқтибос
    ABI

  12. High-density InSb-based quantum dots emitting in the mid-infrared

    Vittorianna Tasco, N. Deguffroy, А. Н. Баранов +5

    Мақола20063 иқтибос
    ABI

  13. MOVPE grown self-assembled and self-ordered InSb quantum dots in a GaSb matrix assessed by AFM, CTEM, HRTEM and PL

    P. Möck, G. R. Booker, N. J. Mason +4

    Мақола20013 иқтибос
    ABI

  14. Quantum dots grown in the InSb/GaSb system by liquid-phase epitaxy

    Ya. A. Parkhomenko, P. A. Dementev, K. D. Moiseev

    Мақола20163 иқтибос
    ABI

  15. New system of self-assembled GaSb/GaP quantum dots

    D. S. Abramkin, М. А. Putyato, А. К. Гутаковский +3

    Мақола20122 иқтибос
    ABI

  16. 100-period, 1.23-eV bandgap InGaAs/GaAsP quantum wells for high-efficiency GaAs solar cells: toward current-matched Ge-based tandem cells

    Hiromasa Fujii, Kasidit Toprasertpong, Yunpeng Wang +3

    Мақола20132 иқтибос
    ABI

  17. GaAs quantum well‐dots solar cells with spectral response extended to 1100 nm

    S. А. Mintairov, N. А. Kalyuzhnyy, M. V. Maximov +3

    Мақола20152 иқтибос
    ABI

  18. Quantum dot solar cells

    V. M. Aroutiounian, S. Petrosyan, A. L. Khachatryan +1

    Мақола20012 иқтибос
    ABI

  19. Сарлавҳасиз

    Бошқа1 иқтибос
    ABI

  20. Сарлавҳасиз

    Бошқа1 иқтибос
    ABI