Ушбу ишга иқтибос қилган ишлар

2 та иш

Иш: Isostructural BaSi₂, BaGe₂ and SrGe₂: electronic and optical properties

1. The dependence of the parameters of energy bands on the depth of the ion-doped layer for Si implanted with ions Ba+

   S. B. Donaev, N. M. Mustafaeva, Azizakhon Maksumkhanova +1

   МақолаIon-surface interactions and analysisAIP conference proceedings20224 иқтибос

   ABIABI:AkademIndex/openalex/2026.other.232444

2. On Si/NiSi2/Si(111) Heterostructures Obtained by Solid-Phase Deposition

   N. M. Mustafoeva, A. K. Tashatov, Б. Е. Умирзаков +1

   МақолаSemiconductor materials and interfacesJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques20240 иқтибос

   ABIABI:AkademIndex/openalex/2024.article.010336