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12 та иш

Иш: About the mechanism of formation and growth of the higher manganese silicide films on silicon

  1. CRC Handbook of Thermoelectrics

    Китоб201016 иқтибос
    ABI

  2. Thin Films—Interdiffusion and Reactions

    J. M. Poate, K. N. Tu, Jean-Claude Mayor +1

    Мақола19795 иқтибос
    ABI

  3. The potential of higher manganese silicide as an optoelectronic thin film material

    John E. Mahan

    Мақола20045 иқтибос
    ABI

  4. Structural observation of Mn silicide islands on Si(111) 7×7 surface with UHV-TEM

    Q. Zhang, Masaki Takeguchi, Miyoko Tanaka +1

    Мақола20024 иқтибос
    ABI

  5. Silicide thin films and their applications in microelectronics

    S. P. Murarka

    Мақола19953 иқтибос
    ABI

  6. Preparation of manganese silicide thin films by solid phase reaction

    Jin‐Liang Wang, Masaaki Hirai, M. Kusaka +1

    Мақола19973 иқтибос
    ABI

  7. Growth of MnSi1.7 on Si(001) by MBE

    S. Teichert, S Schwendler, D.K. Sarkar +5

    Мақола20013 иқтибос
    ABI

  8. Epitaxial growth of MnSi1.7 layers in the presence of an Sb flux

    Yoshinaga Souno, Yoshihito Maeda, Hirokazu Tatsuoka +1

    Мақола20013 иқтибос
    ABI

  9. Morphology of ultrathin manganese silicide on Si(111)

    Tadaaki Nagao, Satoru Ohuchi, Yasuyuki Matsuoka +1

    Мақола19992 иқтибос
    ABI

  10. Thermoelectric properties of manganese silicide films

    Qiang Hou, Z.M. Wang, Y. J. HE

    Мақола20042 иқтибос
    ABI

  11. Semiconducting Silicides

    В. Е. Борисенко

    Китоб20002 иқтибос
    ABI

  12. Growth technique and structural properties of the higher manganese silicide films

    T. S. Kamilov, D.K. Kabilov, I.S. Samiev +3

    МақолаSemiconductor materials and interfaces20051 иқтибос
    ABI