Effect of Co+-ion implantation on the composition and properties of free Si–Cu nanofilm structures
З. А. ИсахановInstitute of Ionic-Plasma and Laser Technologies, Uzbekistan Аcademy of Sciences, Tashkent, 100125, UzbekistanTulkin KodirovInstitute of Ionic-Plasma and Laser Technologies, Uzbekistan Аcademy of Sciences, Tashkent, 100125, UzbekistanA. S. HalmatovInstitute of Ionic-Plasma and Laser Technologies, Uzbekistan Аcademy of Sciences, Tashkent, 100125, UzbekistanМ. К. РузибаеваInstitute of Ionic-Plasma and Laser Technologies, Uzbekistan Аcademy of Sciences, Tashkent, 100125, UzbekistanZ. E. МuhtarovInstitute of Ionic-Plasma and Laser Technologies, Uzbekistan Аcademy of Sciences, Tashkent, 100125, UzbekistanБ. Е. УмирзаковInstitute of Ionic-Plasma and Laser Technologies, Uzbekistan Аcademy of Sciences, Tashkent, 100125, Uzbekistan
ABI
Аннотация
The effect of Co+-ion implantation on the surface composition and the depth distribution profiles of atoms in a Si–Cu (100) heterostructure is investigated. After heating of the ion-implanted sample, a 50–60 Å thick CoSi2 film is formed. It is revealed that after ion implantation the penetration depth of Cu atoms in Si becomes twice as large.
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