Ушбу ишга иқтибос қилган ишлар

2 та иш

Иш: Effects of defect clustering on optical properties of GaN by single and molecular ion irradiation

1. Effect of the Disordering of Thin Surface Layers on the Electronic and Optical Properties of Si(111)

   Б. Е. Умирзаков, Д. А. Ташмухамедова, A. K. Tashatov +2

   МақолаSemiconductor materials and interfacesSemiconductors20204 иқтибос

   ABIABI:AkademIndex/openalex/2026.other.402217

2. On the Band-Gap Width of NiSi2 Nanocrystals Created in the Surface Region of Si Using Ion Implantation

   N. M. Mustafoeva, A. K. Tashatov, Б. Е. Умирзаков

   МақолаSemiconductor materials and interfacesJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques20230 иқтибос

   ABIABI:AkademIndex/openalex/2023.article.007102