Ушбу ишга иқтибос қилган ишлар

3 та иш

Иш: Method to predict length dependency of negative bias temperature instability degradation in p-MOSFETs

1. Lateral Capacitance–Voltage Method of NanoMOSFET for Detecting the Hot Carrier Injection

   A. É. Atamuratov, Ahmed Yusupov, Zamira Atamuratova +2

   МақолаSemiconductor materials and devicesApplied Sciences20203 иқтибос

   ABIABI:AkademIndex/openalex/2020.article.000900

2. Capacitance Method for Identifying Degradation due to Electrical Stress in MOSFETs

   Zamira Atamuratova, Ahmed Yusupov, Jean Chamberlain Chedjou +1

   МақолаSemiconductor materials and devicese-Journal of Surface Science and Nanotechnology20220 иқтибос

   ABIABI:AkademIndex/openalex/2022.article.006400

3. Capacitance-Voltage Method for Detecting the local oxide trapped charge in SOI FinFET

   A.E. Abdikarimov, Mirzabahrom Foziljonov, И. Н. Каримов

   МақолаSemiconductor materials and devices20220 иқтибос

   ABIABI:AkademIndex/openalex/2022.article.011220