Ушбу ишга иқтибос қилган ишлар

2 та иш

Иш: Random telegraph signal amplitudes in sub 100 nm (decanano) MOSFETs: a 3D 'Atomistic' simulation study

1. Contribution to the Physical Modelling of Single Charged Defects Causing the Random Telegraph Noise in Junctionless FinFET

   A. É. Atamuratov, M. M. Khalilloev, Ahmed Yusupov +3

   МақолаSemiconductor materials and devicesApplied Sciences20202 иқтибос

   ABIABI:AkademIndex/openalex/2026.other.541488

2. Simulation of Random Telegraph Noise in Nanometer nMOSFET Induced by Interface and Oxide Trapped Charge

   A. É. Atamuratov, R. Granzner, M. Kittler +3

   БобSemiconductor materials and devicesNATO science for peace and security series. B, Physics and biophysics20130 иқтибос

   ABIABI:AkademIndex/openalex/2013.chapter.000013