Ушбу ишга иқтибос қилган ишлар

2 та иш

Иш: Inversion charge redistribution model of the high-frequency MOS capacitance

1. Electronic density of states at the interface between silicon and lead borosilicate glass

   С. И. Власов, П. Б. Парчинский, B. A. Olmatov

   МақолаSemiconductor materials and interfacesInorganic Materials20004 иқтибос

   ABIABI:AkademIndex/openalex/2026.other.568540

2. Density of states at a gamma-irradiated Si/SiO2 interface: The effect of ultrasonic treatment

   П. Б. Парчинский

   МақолаIon-surface interactions and analysisRussian Microelectronics20050 иқтибос

   ABIABI:AkademIndex/openalex/2005.article.000246