Ушбу ишга иқтибос қилган ишлар

3 та иш

Иш: Thallium dopant in lead chalcogenides: investigation methods and peculiarities

1. Energy parameters of two-electron tin centers in PbSe

   С. А. Немов, F. S. Nasredinov, P. P. Seregin +2

   МақолаChalcogenide Semiconductor Thin FilmsSemiconductors20051 иқтибос

   ABIABI:AkademIndex/openalex/2005.article.000159

2. Electron exchange between neutral and ionized germanium centers in PbSe

   E. I. Terukov, É. S. Khuzhakulov

   МақолаSemiconductor materials and interfacesSemiconductors20050 иқтибос

   ABIABI:AkademIndex/openalex/2005.article.000185

3. Mössbauer study of the Ge two-electron donor centers in PbSe

   Е. И. Теруков, E. S. Khuzhakulov

   МақолаSemiconductor materials and interfacesSemiconductors20050 иқтибос

   ABIABI:AkademIndex/openalex/2005.article.000286