Ушбу ишга иқтибос қилган ишлар

3 та иш

Иш: Epitaxial growth of MnSi1.7 layers in the presence of an Sb flux

1. About the mechanism of formation and growth of the higher manganese silicide films on silicon

   T. S. Kamilov, D.K. Kabilov, I.S. Samiev +6

   МақолаSemiconductor materials and interfaces20053 иқтибос

   ABIABI:AkademIndex/openalex/2026.other.424565

2. The thermoelectric radiation detector based on the multielement structures of the higher manganese silicide films

   T. S. Kamilov, D.K. Kabilov, I.S. Samiev +2

   МақолаSemiconductor materials and interfaces20051 иқтибос

   ABIABI:AkademIndex/openalex/2005.article.000252

3. Growth technique and structural properties of the higher manganese silicide films

   T. S. Kamilov, D.K. Kabilov, I.S. Samiev +3

   МақолаSemiconductor materials and interfaces20051 иқтибос

   ABIABI:AkademIndex/openalex/2026.other.609626