Ушбу ишга иқтибос қилган ишлар

2 та иш

Иш: Current and capacitance transient responses of MOS capacitor. I. General theory and applications to initially depleted surface without surface states

Minority-Carrier Generation at the Interface between Silicon and Lead Borosilicate Glass
П. Б. Парчинский, С. И. Власов
МақолаSemiconductor materials and interfacesRussian Microelectronics20011 иқтибос
ABI
Regular relief on a silicon surface as a structural defect getter
L. S. Berman, I. V. Grekhov, L. S. Kostina +3
МақолаSilicon and Solar Cell TechnologiesTechnical Physics Letters19990 иқтибос
ABI

Ушбу ишга иқтибос қилган ишлар

Minority-Carrier Generation at the Interface between Silicon and Lead Borosilicate Glass

Regular relief on a silicon surface as a structural defect getter