Ушбу ишга иқтибос қилган ишлар

3 та иш

Иш: Diffusion and Electrical Behavior of Zinc in Silicon

1. Photochemical Reorganization of Deep Impurity Centres in Silicon. Dissociation of Donor–Acceptor Pairs

   K. A. Adilov

   МақолаSilicon Nanostructures and Photoluminescencephysica status solidi (b)19910 иқтибос

   ABIABI:AkademIndex/openalex/1991.article.000070

2. Current Mechanisms in Zinc Diffusion-Doped Silicon Samples at T = 300 K

   Э. У. Арзикулов, M. Radzhabova, Xuemin Cui +6

   МақолаSemiconductor materials and interfacesEast European Journal of Physics20240 иқтибос

   ABIABI:AkademIndex/openalex/2024.article.010089

3. Current Mechanisms in Zinc Diffusion-doped Silicon Samples at T = 300 K

   Э. У. Арзикулов, M. Radzhabova, S. N. +4

   ПрепринтAdvancements in Semiconductor Devices and Circuit DesignResearch Square20240 иқтибос

   ABIABI:AkademIndex/openalex/2024.preprint.000148