Ушбу ишга иқтибос қилган ишлар

2 та иш

Иш: Étude de l'anisotropie de la croissance épitaxiale de GaAs en phase vapeur

1. Kinetics and growth mechanism of gallium arsenide crystals in gas-phase epitaxy

   L. G. Lavrent’eva

   Мақолаnanoparticles nucleation surface interactionsRussian Physics Journal19800 иқтибос

   ABIABI:AkademIndex/openalex/1980.article.000078

2. Investigation of anisotropic effects in vapor epitaxy of indium arsenide. I. Anistropy of growth rate and surface microrelief

   Г. А. Александрова, И. В. Ивонин, L. M. Krasil'nikova +3

   МақолаAdvanced Semiconductor Detectors and MaterialsRussian Physics Journal19800 иқтибос

   ABIABI:AkademIndex/openalex/1980.article.000113