Ушбу ишга иқтибос қилган ишлар

3 та иш

Иш: MnSi∼1.73 grown on silicon with mass-analyzed low energy dual ion beam epitaxy technique

1. The thermoelectric radiation detector based on the multielement structures of the higher manganese silicide films

   T. S. Kamilov, D.K. Kabilov, I.S. Samiev +2

   МақолаSemiconductor materials and interfaces20051 иқтибос

   ABIABI:AkademIndex/openalex/2005.article.000252

2. Growth technique and structural properties of the higher manganese silicide films

   T. S. Kamilov, D.K. Kabilov, I.S. Samiev +3

   МақолаSemiconductor materials and interfaces20051 иқтибос

   ABIABI:AkademIndex/openalex/2026.other.609626

3. About the Interface Between the Higher Manganese Silicide Film and Si (111)

   T. S. Kamilov, D.K. Kabilov, S.Kh. Babadjanov +5

   МақолаSemiconductor materials and interfaces20060 иқтибос

   ABIABI:AkademIndex/openalex/2006.article.000312