Ушбу ишга иқтибос қилган ишлар

2 та иш

Иш: Large-band-gap SiC, III-V nitride, and II-VI ZnSe-based semiconductor device technologies

1. Apparatus for growing GaN films on large-area substrates by the method of chloride-hydride vapor-phase epitaxy

   С. И. Степанов, D. Tsvetkov, A. E. Cherenkov

   МақолаGaN-based semiconductor devices and materialsTechnical Physics Letters19980 иқтибос

   ABIABI:AkademIndex/openalex/1998.article.000248

2. 4H-SiC pn Diode Grown by LPE Method for High-Power Applications

   N.I. Kuznetsov, D. A. Bauman, A.V. Gavrilin +6

   МақолаSilicon Carbide Semiconductor TechnologiesMaterials science forum20030 иқтибос

   ABIABI:AkademIndex/openalex/2003.article.000320