Ушбу ишга иқтибос қилган ишлар

2 та иш

Иш: Determining the potential barrier presented by the interfacial layer from the temperature induced I–V characteristics in Al/p-Si Structure with native oxide layer

1. Lateral Photoelectric Effect In Iron-Silicon Dioxide-Compensated Silicon Hybrid Structures

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   МақолаSemiconductor materials and interfacesEast European Journal of Physics20230 иқтибос

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2. Current Mechanisms in Zinc Diffusion-Doped Silicon Samples at T = 300 K

   Э. У. Арзикулов, M. Radzhabova, Xuemin Cui +6

   МақолаSemiconductor materials and interfacesEast European Journal of Physics20240 иқтибос

   ABIABI:AkademIndex/openalex/2024.article.010089