V. T. Tulanov

3 ta ish

Oʻzbekiston Milliy Universiteti

1. An ionization-type Si:S-based semiconductor converter of infrared images with sensitivity in the spectral range of CO2-laser radiation

   V. T. Tulanov, Kh. B. Siyabekov, A.Sh. Davletova +1

   MaqolaLaser Design and ApplicationsSemiconductors20011 iqtibos

   ABIABI:AkademIndex/2026.other.609364

2. Effect of the degree of compensation of sulfur impurity levels on the photoconductivity of silicon near 10.6 µm

   G. B. Gorlin, V. T. Tulanov, Kh. B. Siyabekov

   MaqolaSemiconductor materials and interfacesTechnical Physics19970 iqtibos

   ABIABI:AkademIndex/1997.article.000202

3. Photoconductivity of sulfur-doped silicon near 10.6 µm

   Kh. B. Siyabekov, V. T. Tulanov

   MaqolaThermography and Photoacoustic TechniquesSemiconductors19970 iqtibos

   ABIABI:AkademIndex/1997.article.000231