A.Sh. Davletova

5 ta ish

Toshkent Kimyo Xalqaro Universiteti

1. An ionization-type Si:S-based semiconductor converter of infrared images with sensitivity in the spectral range of CO2-laser radiation

   V. T. Tulanov, Kh. B. Siyabekov, A.Sh. Davletova +1

   MaqolaLaser Design and ApplicationsSemiconductors20011 iqtibos

   ABIABI:AkademIndex/2026.other.609364

2. Dependence of spectral and volt-amper characteristics forms of IR-radiating diodes from the way, material and doping level of the working layers, produced by liquid-phase method

   А. Кутлимратов, A.Sh. Davletova, S. Khakimova

   MaqolaOptical and Acousto-Optic Technologies20040 iqtibos

   ABIABI:AkademIndex/2004.article.000386

3. Peculiarities of spectral characteristics of IR-light emitting diodes obtained by the liquid phase epitaxy

   А. Кутлимратов, A.Sh. Davletova

   MaqolaSemiconductor Lasers and Optical Devices20060 iqtibos

   ABIABI:AkademIndex/2006.article.000430

4. Light emitting diodes structures obtained by overlapping the liquid phase epitaxy and gas phase diffusion of Zn

   А. Кутлимратов, A.Sh. Davletova

   MaqolaAdvanced Semiconductor Detectors and Materials20060 iqtibos

   ABIABI:AkademIndex/2006.article.000431

5. Sensitivity of dislocation engineered Si p-n junctions to influence of illumination and ultrasound

   A.Sh. Davletova, Smagul Karazhanov

   MaqolaOAOchiq kirishSemiconductor materials and interfacesInorganic Materials20090 iqtibos

   ABIABI:AkademIndex/2009.article.000359