Н. К. Полетаев

1 ta ish

Physico-Technical Institute

1. Electrical characteristics of p-3C–SiC/n-6H–SiC heterojunctions grown by sublimation epitaxy on 6H–SiC substrates

   A. А. Lebedev, Anatoly M. Strel’chuk, Denis Davydov +5

   Maqola20013 iqtibos

   ABIABI:AkademIndex/2026.other.413673