G. N. Mosina

3 ta ish

Russian Academy of Sciences

1. Characterization of 3C-SiC/6H-SiC Heterostructures Grown by Vacuum Sublimation

   N.S. Savkina, Anatoly M. Strel’chuk, L. M. Sorokin +4

   MaqolaSilicon Carbide Semiconductor TechnologiesMaterials science forum20031 iqtibos

   ABIABI:AkademIndex/2003.article.000136

2. Nature of Defects in MOCVD Grown GaAlAs-GaAs QW DHs

   B. Yavich, I. N. Kochnev, P. P. Buinov +4

   MaqolaSemiconductor materials and devicesDiffusion and defect data, solid state data. Part B, Solid state phenomena/Solid state phenomena19910 iqtibos

   ABIABI:AkademIndex/1991.article.000080

3. X-Ray Imaging and TEM Study of Micropipes Related to their Propagation through Porous SiC Layer/SiC Epilayer Interface

   T. S. Argunova, M. Yu. Gutkin, Jung Ho Je +5

   MaqolaOAOchiq kirishSilicon Carbide Semiconductor TechnologiesMaterials science forum20040 iqtibos

   ABIABI:AkademIndex/2004.article.000164