M. Ya. Valakh

2 ta ish

V.E. Lashkaryov Institute of Semiconductor Physics

1. Structural transformations and silicon nanocrystallite formation in SiOx films

   V.Ya. Bratus, V. A. Yukhimchuk, L. I. Berezhinsky +6

   Maqola20013 iqtibos

   ABIABI:AkademIndex/2026.other.380235

2. Characteristics of 6H-SiC Bipolar JTE Diodes Realized by Sublimation Epitaxy and Al Implantation

   Anatoly M. Strel’chuk, A. А. Lebedev, D. V. Davydov +8

   MaqolaOAOchiq kirishSilicon Carbide Semiconductor TechnologiesMaterials science forum20041 iqtibos

   ABIABI:AkademIndex/2004.article.000056