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Xizmatlar

A. Yu. Leĭderman

45 ta ish

Oʻzbekiston Respublikasi Fanlar Akademiyasi

AkademScholarda batafsil koʻrsatkichlar

  1. Growth of (GaAs)1 − x (ZnSe) x solid solution films and investigation of their structural and some photoelectric properties

    A.S. Saidov, М. С. Саидов, Sh. N. Usmonov +4

    MaqolaChalcogenide Semiconductor Thin FilmsPhysics of the Solid State20118 iqtibos
    ABI

  2. The synergetic phenomena in photoexcited semiconductors

    P. M. Karageorgy‐Alkalaev, A. Yu. Leĭderman

    MaqolaSilicon and Solar Cell Technologiesphysica status solidi (a)19878 iqtibos
    ABI

  3. Effect of injection depletion in p-n heterostructures based on solid solutions (Si2)1 − x − y (Ge2) x (GaAs) y , (Si2)1 − x (CdS) x , (InSb)1 − x (Sn2) x , and CdTe1 − x S x

    Sh. N. Usmonov, A.S. Saidov, A. Yu. Leĭderman

    MaqolaNear-Field Optical MicroscopyPhysics of the Solid State20147 iqtibos
    ABI

  4. Double-injection currents in Zn-compensated silicon pin structures

    P. M. Karageorgy‐Alkalaev, I. Z. Karimova, P. I. Knigin +1

    MaqolaSilicon and Solar Cell Technologiesphysica status solidi (a)19767 iqtibos
    ABI

  5. Mechanism of charge transfer in n-CdS/p-CdTe heterostructures with a thick layer of the CdTe1 − x S x solid solution

    Kh. Kh. Ismoilov, A. M. Abdugafurov, Ш. А. Мирсагатов +1

    MaqolaAdvanced Semiconductor Detectors and MaterialsPhysics of the Solid State20086 iqtibos
    ABI

  6. Mechanism of charge transfer in injection photodiodes based on the In-n +-CdS-n-CdS x Te1 − x -p-Zn x Cd1 − x Te-Mo structure

    Ш. А. Мирсагатов, A. Yu. Leĭderman, O. K. Ataboev

    MaqolaChalcogenide Semiconductor Thin FilmsPhysics of the Solid State20136 iqtibos
    ABI

  7. Recombination in semiconductors with deep impurities

    A. Yu. Leĭderman, V. G. Stel’makh, М. Ф. Садыков

    MaqolaSilicon and Solar Cell TechnologiesApplied Solar Energy20085 iqtibos
    ABI

  8. Investigation of current-voltage characteristics of the n-CdS-p-CdTe structure with an extended layer of the intermediate solid solution

    Ш. А. Мирсагатов, A. Yu. Leĭderman, B. U. Aĭtbaev +1

    MaqolaSilicon and Solar Cell TechnologiesPhysics of the Solid State20095 iqtibos
    ABI

  9. Growth, structure, and properties of GaAs-based (GaAs)1–x–y (Ge2) x (ZnSe) y epitaxial films

    S.Z. Zaynabidinov, A.S. Saidov, A. Yu. Leĭderman +4

    MaqolaSemiconductor Quantum Structures and DevicesSemiconductors20165 iqtibos
    ABI

  10. Statistics of Inter‐Impurity Recombination of Electrons and Holes in Semiconductors

    P. M. Karageorgy‐Alkalaev, A. Yu. Leĭderman

    MaqolaSilicon and Solar Cell Technologiesphysica status solidi (b)19685 iqtibos
    ABI

  11. On the theory of double injection in semiconductors with continuous distribution of trapping levels within the Gap

    A. Yu. Leĭderman

    MaqolaSilicon and Solar Cell Technologiesphysica status solidi (a)19794 iqtibos
    ABI

  12. Study of properties of tellurium-doped indium phosphide as photoconversion material

    A. Yu. Leĭderman, A.S. Saidov, M. M. Khashaev +1

    MaqolaPhase-change materials and chalcogenidesApplied Solar Energy20144 iqtibos
    ABI

  13. The thermoelectric effect in a graded-gap nSi–pSi1–x Ge x heterostructure

    A. Yu. Leĭderman, A.S. Saidov, A. B. Karshiev

    MaqolaMaterial Science and ThermodynamicsApplied Solar Energy20164 iqtibos
    ABI

  14. Possible influence of nonequilibrium carrier recombination rate saturation on photocell operation

    A. Yu. Leĭderman

    MaqolaSilicon and Solar Cell TechnologiesApplied Solar Energy20084 iqtibos
    ABI

  15. On the theory of current–voltage characteristics of semiconductor diode structures with strong carrier accumulation

    A. Yu. Leĭderman, P. M. Karageorgy‐Alkalaev

    MaqolaSilicon and Solar Cell Technologiesphysica status solidi (a)19793 iqtibos
    ABI

  16. On the magnetosensitivity of semiconductor diode structures with strong carrier accumulation

    M. S. Gilenko, P. M. Karageorgy‐Alkalaev, A. Yu. Leĭderman

    MaqolaSemiconductor Quantum Structures and Devicesphysica status solidi (a)19813 iqtibos
    ABI

  17. Thermovoltaic processes in gallium arsenide doped with tin

    A. Yu. Leĭderman, A.S. Saidov, M. M. Hashaev +1

    MaqolaChalcogenide Semiconductor Thin FilmsApplied Solar Energy20123 iqtibos
    ABI

  18. The nature of thermovoltaic currents and voltages observed for the polycrystalline silicon synthesized by means of five-time melting of engineering silicon in a solar furnace

    A.S. Saidov, A. Yu. Leĭderman, Sh. T. Manshurov

    MaqolaSilicon and Solar Cell TechnologiesApplied Solar Energy20112 iqtibos
    ABI

  19. Infralow-frequency oscillations in photoconductivity of chromium-doped silicon

    Kh. Kh. Dzhuliev, A. Yu. Leĭderman, A. T. Mamadalimov

    MaqolaSilicon and Solar Cell TechnologiesTechnical Physics Letters20032 iqtibos
    ABI

  20. Thermoelectric effect in the graded band gap Si1–x Ge x (0.2 ≤ x ≤ 1), Si1–x Ge x (0.5 ≤ x ≤ 1) solid solutions dependent on the gap difference

    A. Yu. Leĭderman, A.S. Saidov, A. B. Karshiev

    MaqolaMaterial Science and ThermodynamicsApplied Solar Energy20172 iqtibos
    ABI

  21. On the generation-recombination currents in p-n junctions of semiconductors with continuous gap-state spectrum

    A. Yu. Leĭderman

    MaqolaSilicon and Solar Cell Technologiesphysica status solidi (a)19852 iqtibos
    ABI

  22. Influence of deep impurity levels on double injection in semiconductors

    P. M. Karageorgy‐Alkalaev, A. Yu. Leĭderman, F. Ya. Rabinovich

    MaqolaSilicon and Solar Cell Technologiesphysica status solidi (a)19722 iqtibos
    ABI

  23. Effective solar cells based on high-resistance monocrystalline silicon

    М. Н. Турсунов, A. Yu. Leĭderman, S. Dadamukhamedov +3

    MaqolaSilicon and Solar Cell TechnologiesApplied Solar Energy20072 iqtibos
    ABI

  24. Computer simulation of generation-recombination currents in amorphous silicon p-n diode structures

    S. A. Azimov, P. M. Karageofgy-Alkalaev, A. Yu. Leĭderman +1

    MaqolaSilicon and Solar Cell Technologiesphysica status solidi (a)19842 iqtibos
    ABI

  25. Anomalous temperature dependence of volt-ampere characteristics of pSi-n(Si2)1 −x (ZnSe) x structures

    Sh. N. Usmonov, A.S. Saidov, М. С. Саидов +2

    MaqolaSemiconductor materials and interfacesApplied Solar Energy20091 iqtibos
    ABI