Anna Volkova

2 ta ish

Ioffe Institute

1. Characterization of 3C-SiC epilayers grown on 6H-SiC substrates by vacuum sublimation

   N.S. Savkina, A. S. Tregubova, M. P. Scheglov +3

   Maqola20022 iqtibos

   ABIABI:AkademIndex/2026.other.413670

2. Growth and Investigation of n-AlGaN/p-6H-SiC/n-6H-SiC Heterostructures

   A. А. Lebedev, Oleg Ledyaev, Anatoly M. Strel’chuk +6

   MaqolaOAOchiq kirishGaN-based semiconductor devices and materialsMaterials science forum20060 iqtibos

   ABIABI:AkademIndex/2006.article.000281