И. С. Васильевский

5 ta ish

National Research Nuclear University MEPhI

1. Electron effective masses in an InGaAs quantum well with InAs and GaAs inserts

   V. A. Kulbachinskiı̆, N. A. Yuzeeva, Г. Б. Галиев +4

   Maqola20126 iqtibos

   ABIABI:AkademIndex/2026.other.258959

2. Electron mobility and drift velocity in selectively doped InAlAs/InGaAs/InAlAs heterostructures

   И. С. Васильевский, Г. Б. Галиев, E. A. Klimov +7

   Maqola20112 iqtibos

   ABIABI:AkademIndex/2026.other.559403

3. Structural and electrical properties of quantum wells with nanoscale InAs inserts in In y Al1 − y As/In x Ga1 − x As heterostructures on InP substrates

   А. Л. Васильев, И. С. Васильевский, Г. Б. Галиев +6

   Maqola20112 iqtibos

   ABIABI:AkademIndex/2026.other.559406

4. Specific features of the photoluminescence of HEMT nanoheterostructures containing a composite InAlAs/InGaAs/InAs/InGaAs/InAlAs quantum well

   Г. Б. Галиев, И. С. Васильевский, E. A. Klimov +4

   Maqola20152 iqtibos

   ABIABI:AkademIndex/2026.other.559410

5. Electron mobility and effective mass in composite InGaAs quantum wells with InAs and GaAs nanoinserts

   Д. С. Пономарев, И. С. Васильевский, Г. Б. Галиев +4

   Maqola20122 iqtibos

   ABIABI:AkademIndex/2026.other.559412