Д. С. Пономарев

3 ta ish

National Research Nuclear University MEPhI

1. Electron effective masses in an InGaAs quantum well with InAs and GaAs inserts

   V. A. Kulbachinskiı̆, N. A. Yuzeeva, Г. Б. Галиев +4

   Maqola20126 iqtibos

   ABIABI:AkademIndex/2026.other.258959

2. Structural and electrical properties of quantum wells with nanoscale InAs inserts in In y Al1 − y As/In x Ga1 − x As heterostructures on InP substrates

   А. Л. Васильев, И. С. Васильевский, Г. Б. Галиев +6

   Maqola20112 iqtibos

   ABIABI:AkademIndex/2026.other.559406

3. Electron mobility and effective mass in composite InGaAs quantum wells with InAs and GaAs nanoinserts

   Д. С. Пономарев, И. С. Васильевский, Г. Б. Галиев +4

   Maqola20122 iqtibos

   ABIABI:AkademIndex/2026.other.559412