V. A. Kulbachinskiı̆

3 ta ish

Lomonosov Moscow State University

1. Electron effective masses in an InGaAs quantum well with InAs and GaAs inserts

   V. A. Kulbachinskiı̆, N. A. Yuzeeva, Г. Б. Галиев +4

   Maqola20126 iqtibos

   ABIABI:AkademIndex/2026.other.258959

2. Experimental Determination of the Subband Electron Effective Mass in InGaAs/InAlAs HEMT-structures by the Shubnikov – de Haas Effect at Two Temperatures

   N. A. Yuzeeva, Г. Б. Галиев, E. A. Klimov +3

   MaqolaOAOchiq kirish20155 iqtibos

   ABIABI:AkademIndex/2026.other.110158

3. Electron mobility and effective mass in composite InGaAs quantum wells with InAs and GaAs nanoinserts

   Д. С. Пономарев, И. С. Васильевский, Г. Б. Галиев +4

   Maqola20122 iqtibos

   ABIABI:AkademIndex/2026.other.559412