K. Kálna

2 ta ish

Swansea University

1. Implementation of the Density Gradient Quantum Corrections for 3-D Simulations of Multigate Nanoscaled Transistors

   Antonio J. García‐Loureiro, Natalia Seoane, M. Aldegunde +4

   Maqola20117 iqtibos

   ABIABI:AkademIndex/2026.other.397911

2. Influence of device geometry on electrical characteristics of a 10.7 nm SOI-FinFET

   A.E. Abdikarimov, Guillermo Indalecio, Enrique Comesaña +4

   MaqolaAdvancements in Semiconductor Devices and Circuit Design20145 iqtibos

   ABIABI:AkademIndex/2026.other.386764