O. R. Pardaev

1 ta ish

Islom Karimov nomidagi Toshkent davlat texnika universiteti

1. Effect of thermal and laser annealing on the atom distribution profiles in Si(111) implanted with P+ and B+ ions

   А.С. Рысбаев, J. B. Khujaniyozov, I. R. Bekpulatov +2

   MaqolaIon-surface interactions and analysisJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques201712 iqtibos

   ABIABI:AkademIndex/2017.article.000091