R. Rahmanov

1 ta ish

Urganch davlat universiteti

1. Simulation of DIBL effect in 25 nm SOI-FinFET with the different body shapes

   A. É. Atamuratov, A.E. Abdikarimov, M. M. Khalilloev +4

   MaqolaOAOchiq kirishAdvancements in Semiconductor Devices and Circuit DesignNanosystems Physics Chemistry Mathematics20174 iqtibos

   ABIABI:AkademIndex/2017.article.000161