Jihoon Seo

3 ta ish

Samsung (South Korea)

1. Method to predict length dependency of negative bias temperature instability degradation in p-MOSFETs

   Jihoon Seo, Gang-Jun Kim, Donghee Son +3

   Maqola20163 iqtibos

   ABIABI:AkademIndex/2026.other.536313

2. Effect of oxide-trapped charge on the anomalous drain avalanche hot carrier degradation of a SiO2 dielectric nMOSFET

   Yeohyeok Yun, Jihoon Seo, Young-Kyu Kwon +1

   Maqola20193 iqtibos

   ABIABI:AkademIndex/2026.other.536320

3. Method to estimate profile of threshold voltage degradation in MOSFETs due to electrical stress

   Yeohyeok Yun, Jihoon Seo, Donghee Son +1

   Maqola20182 iqtibos

   ABIABI:AkademIndex/2026.other.536318