A. Lyutovich

4 ta ish

Electronics Institute, Academy of Sciences of the Uzbek SSR, Tashkent, Uzbekistan

1. “Radiation Sieve” Effect during Epitaxy from Low Energy Ion-Molecular Flow

   A. Budrevich, A. Lyutovich, Б. Л. Оксенгендлер

   MaqolaGeological and Geochemical Analysisphysica status solidi (a)19891 iqtibos

   ABIABI:AkademIndex/openalex/1989.article.000071

2. Ion-Molecular Epitaxy

   A. Lyutovich

   BobSemiconductor materials and devices19870 iqtibos

   ABIABI:AkademIndex/openalex/1987.chapter.000006

3. Microselectivity Energy Dependence of Growing Film Orientation During Ion-Molecular Flow Condensation

   A. Budrevich, A. Lyutovich, Б. Л. Оксенгендлер

   MaqolaElectrocatalysts for Energy Conversionphysica status solidi (a)19900 iqtibos

   ABIABI:AkademIndex/openalex/1990.article.000110

4. Characterisation of the generation of ions in electron beam evaporator for the control of metal deposition processes

   A. Lyutovich, Karl Maile, A. Gusko +2

   Maqolananoparticles nucleation surface interactionsSurface and Coatings Technology20020 iqtibos

   ABIABI:AkademIndex/openalex/2002.article.000117