J. H. Je

1 ta ish

Institute of Crystal Growth, 12489, Berlin, Germany

1. Current-voltage characteristics of Si/Si1 − x Ge x heterodiodes fabricated by direct bonding

   I. V. Grekhov, E. I. Belyakova, L. S. Kostina +7

   MaqolaSemiconductor materials and interfacesTechnical Physics Letters20080 iqtibos

   ABIABI:AkademIndex/openalex/2008.article.000211