Ushbu ishga iqtibos qilgan ishlar

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Ish: Long-range gettering of microdefects in silicon single crystals during the formation of porous silicon layers on their surface and ion irradiation

1. Physical mechanism of gettering of impurity Ni atom clusters in Si lattice

   B. K. Ismaylov, N. F. Zikrillayev, К. А. Исмайлов +1

   MaqolaOAOchiq kirish20244 iqtibos

   ABIABI:AkademIndex/2026.other.787370