Ushbu ishga iqtibos qilgan ishlar

1 ta ish

Ish: Characteristics of 6H-SiC Bipolar JTE Diodes Realized by Sublimation Epitaxy and Al Implantation

1. High-Quality 3C-SiC pn-Structures Created by Sublimation Epitaxy on a 6H-SiC Substrate

   Anatoly M. Strel’chuk, A. А. Lebedev, Alexey N. Kuznetsov +2

   MaqolaSilicon Carbide Semiconductor TechnologiesMaterials science forum20042 iqtibos

   ABIABI:AkademIndex/2026.other.381992