Ushbu ishga iqtibos qilgan ishlar

13 ta ish

Ish: I–V characteristic of p-n structures based on a continuous solid solutions (Si2)1 − xx (CdS) x

1. Mechanism of charge transfer in injection photodetectors based on the M(In)-n-CdS-p-Si-M(In) structure

   Ш. А. Мирсагатов, I. B. Sapaev

   MaqolaSemiconductor materials and interfacesPhysics of the Solid State20158 iqtibos

   ABIABI:AkademIndex/2015.article.000129

2. Effect of injection depletion in p-n heterostructures based on solid solutions (Si2)1 − x − y (Ge2) x (GaAs) y , (Si2)1 − x (CdS) x , (InSb)1 − x (Sn2) x , and CdTe1 − x S x

   Sh. N. Usmonov, A.S. Saidov, A. Yu. Leĭderman

   MaqolaNear-Field Optical MicroscopyPhysics of the Solid State20147 iqtibos

   ABIABI:AkademIndex/2014.article.000178

3. Mechanism of charge transfer in injection photodiodes based on the In-n +-CdS-n-CdS x Te1 − x -p-Zn x Cd1 − x Te-Mo structure

   Ш. А. Мирсагатов, A. Yu. Leĭderman, O. K. Ataboev

   MaqolaChalcogenide Semiconductor Thin FilmsPhysics of the Solid State20136 iqtibos

   ABIABI:AkademIndex/2026.other.393702

4. Photoelectric and electrical properties of a reverse-biased p-Si/n-CdS/n +-CdS heterostructure

   Ш. А. Мирсагатов, I. B. Sapaev

   MaqolaSemiconductor materials and interfacesInorganic Materials20145 iqtibos

   ABIABI:AkademIndex/2014.article.000125

5. Current-voltage characteristic of the injection photodetector based on In–n-CdS–p-Si–In structure

   I. B. Sapaev

   MaqolaOAOchiq kirishChalcogenide Semiconductor Thin FilmsSemiconductor Physics Quantum Electronics & Optoelectronics20195 iqtibos

   ABIABI:AkademIndex/2026.other.238416

6. Injection photodiode based on a p-Si-n-CdS-n +-CdS structure

   Ш. А. Мирсагатов, I. B. Sapayev

   MaqolaSilicon Nanostructures and PhotoluminescenceSemiconductors20144 iqtibos

   ABIABI:AkademIndex/2026.other.397212

7. Charge Transport Mechanism in p--Si--n--(Si2)1--x(CdS)x Semiconductor Structures

   S.Z. Zaynabidinov, Kh. M. Madaminov

   MaqolaIndustrial Engineering and TechnologiesHerald of the Bauman Moscow State Technical University Series Natural Sciences20202 iqtibos

   ABIABI:AkademIndex/2020.article.001008

8. Technology of fabrication of CdS_xTe_1-x solid solution on silicon substrate

   I.B. Sapaev, S. Sadullaev, D. Babajanov +5

   MaqolaOAOchiq kirishAdvanced Semiconductor Detectors and MaterialsE3S Web of Conferences20232 iqtibos

   ABIABI:AkademIndex/2026.other.432351

9. Effect of Injection Phenomena on Electrical Properties of pSi--nSi1--xSnx Heterojunctions

   Kh. M. Madaminov

   MaqolaSemiconductor materials and interfacesHerald of the Bauman Moscow State Technical University Series Natural Sciences20211 iqtibos

   ABIABI:AkademIndex/2021.article.002068

10. Determining certain physical settings of photocells

    A. Yu. Leyderman

    MaqolaSilicon and Solar Cell TechnologiesApplied Solar Energy20110 iqtibos

    ABIABI:AkademIndex/2011.article.000435

11. Obtaining new types of compounds between silicon and cadmium sulfide

    I.B. Sapaev

    MaqolaOAOchiq kirishChalcogenide Semiconductor Thin FilmsE3S Web of Conferences20230 iqtibos

    ABIABI:AkademIndex/2023.article.009628

12. Technology of fabrication of CDS_XTe_1-X solid solution on silicon substrate

    I.B. Sapaev, Б. Сапаев, D. Babajanov

    MaqolaOAOchiq kirishChalcogenide Semiconductor Thin FilmsE3S Web of Conferences20230 iqtibos

    ABIABI:AkademIndex/2023.article.009634

13. Obtaining new types of compounds between silicon and cadmium sulfide

    I.B. Sapaev

    MaqolaOAOchiq kirishChalcogenide Semiconductor Thin FilmsE3S Web of Conferences20230 iqtibos

    ABIABI:AkademIndex/2023.article.009761