Maqola

Study of doping uniformity of a 200 kV ion implanter by RBS and sheet resistance measurements

Hui LiKey Laboratory of Artificial Micro- and Nano-Materials of Ministry of Education and School of Physics and Technology, Wuhan University, Wuhan, 430072, ChinaZe-Song WangKey Laboratory of Artificial Micro- and Nano-Materials of Ministry of Education and School of Physics and Technology, Wuhan University, Wuhan, 430072, ChinaShengjun ZhangKey Laboratory of Artificial Micro- and Nano-Materials of Ministry of Education and School of Physics and Technology, Wuhan University, Wuhan, 430072, ChinaVasiliy PelenovichKey Laboratory of Artificial Micro- and Nano-Materials of Ministry of Education and School of Physics and Technology, Wuhan University, Wuhan, 430072, ChinaFeng RenKey Laboratory of Artificial Micro- and Nano-Materials of Ministry of Education and School of Physics and Technology, Wuhan University, Wuhan, 430072, ChinaDejun FuKey Laboratory of Artificial Micro- and Nano-Materials of Ministry of Education and School of Physics and Technology, Wuhan University, Wuhan, 430072, ChinaChuan-Sheng LiuKey Laboratory of Artificial Micro- and Nano-Materials of Ministry of Education and School of Physics and Technology, Wuhan University, Wuhan, 430072, ChinaZhiwei AiKey Laboratory of Artificial Micro- and Nano-Materials of Ministry of Education and School of Physics and Technology, Wuhan University, Wuhan, 430072, China

Nuclear Science and Techniquesjournal2016en

Ochiq kirish: yoʻq

ABI

Annotatsiya

Annotatsiya mavjud emas.

Mavzular

Ion-surface interactions and analysis Integrated Circuits and Semiconductor Failure Analysis Silicon and Solar Cell Technologies

Identifikatorlar

DOI: 10.1007/s41365-016-0058-x

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