Tunable defect engineering in TiON thin films by multi-step sputtering processes: from a Schottky diode to resistive switching memory
Teng‐Yu SuDepartment of Materials Science and EngineeringChi‐Hsin HuangHsinchuYu‐Chuan ShihDepartment of Materials Science and EngineeringTsang-Hsuan WangHsinchuHenry MedinaHsinchuJian‐Shiou HuangDepartment of Materials Science and EngineeringHsu‐Sheng TsaiInstitute of Nuclear Engineering and ScienceYu‐Lun ChuehSchool of Material Science and Engineering
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The role of defect engineering is essential in resistive switching memory.
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