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Ferroelectric and Negative Capacitance Devices

42 ta ish

  1. Resistive Switching Behavior of SnO₂/ZnO Heterojunction Thin Films for Non-Volatile Memory Applications

    Jamoliddin X. Murodov, Sh. U. Yuldashev, Azamat O. Arslanov +6

    MaqolaOchiq kirishAdvanced Memory and Neural ComputingEast European Journal of Physics20257 iqtibos
    ABI

  2. Resistive Switching Properties in Memristors for Optoelectronic Synaptic Memristors: Deposition Techniques, Key Performance Parameters, and Applications

    Sattam Al Otaibi, Naveed ur Rehman, Shahid Iqbal +2

    MaqolaOchiq kirishAdvanced Memory and Neural ComputingACS Applied Electronic Materials20236 iqtibos
    ABI

  3. Efficient CNN Accelerator with FPGA for eye disorders Prediction

    P Karthik Reddy, Abdullaeva Dilbar Ubaydullaevna, Anorgul Ashirova +3

    MaqolaFerroelectric and Negative Capacitance Devices20255 iqtibos
    ABI

  4. Dual-doped ZnO-based magnetic semiconductor resistive switching response for memristor-based technologies

    Naveed ur Rehman, Nasir Rahman, Iftikhar Ahmad +8

    MaqolaAdvanced Memory and Neural ComputingJournal of Materials Science Materials in Electronics20244 iqtibos
    ABI

  5. Memristive Devices from CuO Nanoparticles

    Pundalik D. Walke, Abu ul Hassan S. Rana, Sh. U. Yuldashev +5

    MaqolaOchiq kirishAdvanced Memory and Neural ComputingNanomaterials20203 iqtibos
    ABI

  6. High-stability resistive switching memristor with high-retention memory window response for brain-inspired computing

    Rajwali Khan, Shahid Iqbal, Kwun Nam Hui +4

    MaqolaOchiq kirishAdvanced Memory and Neural ComputingSensors and Actuators A Physical20252 iqtibos
    ABI

  7. <scp>LAX</scp> phases: A family of novel stable layered materials, informatics‐based discovery

    Ehsan Alibagheri, Mohammad Khazaei, Mehdi Estili +5

    MaqolaOchiq kirishMXene and MAX Phase MaterialsInfoMat20252 iqtibos
    ABI

  8. Recent innovations in 2D magnetic materials and their potential applications in the modern era

    Ehsan Elahi, Muhammad Asghar Khan, Muhammad Suleman +8

    Maqola2D Materials and ApplicationsMaterials Today20231 iqtibos
    ABI

  9. Formation of Highly Conductive Interfaces in Crystalline Ionic Liquid-Gated Unipolar MoTe2/h-BN Field-Effect Transistor

    Kamoladdin Saidov, Jamoliddin Razzokov, Odilkhuja Parpiev +4

    MaqolaOchiq kirishAdvanced Memory and Neural ComputingNanomaterials20231 iqtibos
    ABI

  10. Unveiling cutting-edge developments: architectures and nanostructured materials for application in optoelectronic artificial synapses

    Sattam Al Otaibi, Naveed Ur Rahman, Muhammad Faisal Hayat +10

    Sharh maqolaAdvanced Memory and Neural ComputingNanoscale20241 iqtibos
    ABI

  11. Design and Simulation of Four-Stage FinFET Amplifier

    Jami Venkata Suman, P.Anitha, Jaya sudha reddy +3

    MaqolaAnalog and Mixed-Signal Circuit Design20251 iqtibos
    ABI

  12. Role of surface terminations in enhancing CrTe2 MXene performance for LIBs

    Qamar Abuhassan, Ahmed Aldulaimi, Omayma Salim Waleed +8

    MaqolaMXene and MAX Phase MaterialsJournal of Molecular Graphics and Modelling20261 iqtibos
    ABI

  13. Single flake homo p–n diode of MoTe <sub>2</sub> enabled by oxygen plasma doping

    Irsa Zulfiqar, Sania Gul, Hafiz Aamir Sohail +9

    MaqolaOchiq kirish2D Materials and ApplicationsNanotechnology Reviews20241 iqtibos
    ABI

  14. Combined Influence of Gate Oxide and Back Oxide Materials on Self-Heating and DIBL Effect in 2D MOS2-Based MOSFETs

    A. É. Atamuratov, Khushnudbek Sh. Saparov, Ahmed Yusupov +1

    MaqolaOchiq kirish2D Materials and ApplicationsApplied Sciences20231 iqtibos
    ABI

  15. Table of Contents

    Karl H. Menges

    BobDiverse Scientific and Economic StudiesColumbia University Press eBooks19470 iqtibos
    ABI

  16. Tunable defect engineering in TiON thin films by multi-step sputtering processes: from a Schottky diode to resistive switching memory

    Teng‐Yu Su, Chi‐Hsin Huang, Yu‐Chuan Shih +5

    MaqolaAdvanced Memory and Neural ComputingJournal of Materials Chemistry C20170 iqtibos
    ABI

  17. Table of Contents

    BobDiverse Scientific and Economic Studies20180 iqtibos
    ABI

  18. Table of Contents

    BobDiverse Scientific and Economic StudiesPrinceton University Press eBooks20200 iqtibos
    ABI

  19. Table of Contents

    BobDiverse Scientific and Economic Studies20210 iqtibos
    ABI

  20. Self heating and DIBL effects in 2D MoS2 based MOSFET with different gate oxide and back oxide materials

    A. É. Atamuratov, X. Sh. Saparov, Jean Chamberlain Chedjou +2

    Maqola2D Materials and Applications20220 iqtibos
    ABI

  21. Table of Contents

    BobDiverse Scientific and Economic StudiesUniversity of Hawaii Press eBooks20230 iqtibos
    ABI

  22. Table of Contents

    BobDiverse Scientific and Economic StudiesUniversity of Hawaii Press eBooks20230 iqtibos
    ABI

  23. Recent Developments on Novel 2D Materials for Emerging Neuromorphic Computing Devices

    Muhammad Hamza Pervez, Ehsan Elahi, Muhammad Asghar Khan +8

    MaqolaOchiq kirishAdvanced Memory and Neural ComputingSmall Structures20240 iqtibos
    ABI

  24. Doping induced enhancement of resistive switching responses in ZnO for neuromorphic computing

    Naveed Ur Rahman, Muhammad Adil Mahmood, Nasir Rahman +5

    MaqolaAdvanced Memory and Neural ComputingJournal of Materials Science Materials in Electronics20240 iqtibos
    ABI

  25. Expression of concern: Enhanced electrical and magnetic properties of (Co, Yb) co-doped ZnO memristor for neuromorphic computing

    Noureddine Elboughdiri, Shahid Iqbal, Sherzod Abdullaev +4

    MaqolaOchiq kirishAdvanced Memory and Neural ComputingRSC Advances20240 iqtibos
    ABI