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15 ta ish

Ish: The Influence of a Single Charged Interface Trap on the Subthreshold Drain Current in FinFETs with Different Fin Shapes

  1. Implementation of the Density Gradient Quantum Corrections for 3-D Simulations of Multigate Nanoscaled Transistors

    Antonio J. García‐Loureiro, Natalia Seoane, M. Aldegunde +4

    Maqola20117 iqtibos
    ABI

  2. Quantum corrections in the simulation of decanano MOSFETs

    Asen Asenov, A. R. Brown, J.R. Watling

    Maqola20034 iqtibos
    ABI

  3. Single-trap-induced random telegraph noise for FinFET, Si/Ge Nanowire FET, Tunnel FET, SRAM and logic circuits

    Ming-Long Fan, Shao‐Yu Yang, Vita Pi‐Ho Hu +3

    Maqola20144 iqtibos
    ABI

  4. Sarlavhasiz

    Boshqa4 iqtibos
    ABI

  5. RTN distribution comparison for bulk, FDSOI and FinFETs devices

    Louis Gerrer, Salvatore Amoroso, Razaidi Hussin +1

    Maqola20143 iqtibos
    ABI

  6. Characterising lateral capacitance of MNOSFET with localised trapped charge in nitride layer

    A. É. Atamuratov, Zamira Atamuratova, А. Yusupov +1

    MaqolaOchiq kirishSemiconductor materials and devicesResults in Physics20183 iqtibos
    ABI

  7. Anomalous Behavior of Lateral C–V Characteristic of an MNOS Transistor with an Embedded Local Charge in the Nitride Layer

    Zamira Atamuratova, А. Yusupov, B. O. Khalikberdiev +1

    MaqolaSemiconductor materials and devicesTechnical Physics20193 iqtibos
    ABI

  8. Sarlavhasiz

    Boshqa2 iqtibos
    ABI

  9. Sarlavhasiz

    Boshqa2 iqtibos
    ABI

  10. Sarlavhasiz

    Boshqa2 iqtibos
    ABI

  11. Sarlavhasiz

    Boshqa2 iqtibos
    ABI

  12. Sarlavhasiz

    Boshqa1 iqtibos
    ABI

  13. Sarlavhasiz

    Boshqa1 iqtibos
    ABI

  14. Sarlavhasiz

    Boshqa1 iqtibos
    ABI

  15. Sarlavhasiz

    Boshqa1 iqtibos
    ABI