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Ish: Investigation of the Crystallographic Perfection and Photoluminescence Spectrum of the Epitaxial Films of (Si2)1-x(GaP)x<a:math xmlns:a="http://www.w3.org/1998/Math/MathML" id="M1"> <a:mfenced open="(" close=")" separators="|"> <a:mrow> <a:mn>0</a:mn> <a:mo>≤</a:mo> <a:mi>x</a:mi> <a:mo>≤</a:mo> <a:mn>1</a:mn> </a:mrow> </a:mfenced> </a:math> Solid Solution, Grown on Si and GaP Substrates with the Crystallographic Orientation (111)

  1. Composition of Silicon Alloyed with Gallium and Phosphorus Atoms

    Н. Ф. Зикриллаев, S. Koveshnikov, X. S. Turekeev +1

    MaqolaSemiconductor materials and interfacesJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques20241 iqtibos
    ABI

  2. Morphological Studies of (Ge2)1-X(ZnSe)X Solid Solutions

    A.Sh. Razzokov, A.S. Saidov, M.A. Shonazarova +2

    MaqolaOchiq kirishPhase-change materials and chalcogenidesEast European Journal of Physics20251 iqtibos
    ABI

  3. INTEGRATING ARTIFICIAL INTELLIGENCE AND SLAM FOR AUTONOMOUS MOBILE ROBOTS: A SEMANTIC, DYNAMICS-AWARE ARCHITECTURE AND A CONTROLLED LOCALIZATION STUDY

    Sherzod A. Yarashev, Jurabek Abdiev

    MaqolaOchiq kirish20260 iqtibos
    ABI

  4. Diffusion of Phosphorus and Gallium from a Deposited Layer of Gallium Phosphide into Silicon

    Н. Ф. Зикриллаев, S. Koveshnikov, Kh. S. Turekeev +2

    MaqolaOchiq kirishSilicon and Solar Cell TechnologiesPhysics of the Solid State20220 iqtibos
    ABI

  5. Diffusion of Phosphorus and Gallium from a Deposited Layer of Gallium Phosphide into Silicon

    Н. Ф. Зикриллаев, S. Koveshnikov, Kh.S. Turekeev Kh. S. +2

    MaqolaOchiq kirishSemiconductor materials and interfacesФизика твердого тела20220 iqtibos
    ABI

  6. Диффузия фосфора и галлия из напыленного слоя фосфида галлия в кремний

    Н. Ф. Зикриллаев, С. В. Ковешников, Х.С. Турекеев +2

    MaqolaOchiq kirish20220 iqtibos
    ABI

  7. Investigation of the Features of the Thermovoltaic Effect in GaSb, GaAs and GaP Binary Compounds

    A.S. Saidov, Sh. N. Usmonov, O. Z. Turgunov

    MaqolaSemiconductor materials and interfacesApplied Solar Energy20230 iqtibos
    ABI

  8. Technology for obtaining VO2 films from the gas phase during thermal decomposition

    M.Z. Sharipov, J O Urinov, J R Kilichov +2

    MaqolaOchiq kirishTransition Metal Oxide NanomaterialsJournal of Physics Conference Series20240 iqtibos
    ABI

  9. Composition of silicon jointly doped with impurity atoms of gallium and phosphorus

    Н. Ф. Зикриллаев, S. Koveshnikov, X. S. Turekeev +1

    MaqolaOchiq kirishSilicon and Solar Cell TechnologiesПоверхность Рентгеновские синхротронные и нейтронные исследования20240 iqtibos
    ABI

  10. Physical and Magnetic Properties of Silicon Doped with Impurity Germanium Atoms

    N. F. Zikrillayev, F. E. Urakova, A. Toshev +4

    MaqolaOchiq kirishSemiconductor materials and interfacesEast European Journal of Physics20250 iqtibos
    ABI

  11. Photovoltaic Cells Based on Silicon with Binary Compounds GexSi1–x

    Н. Ф. Зикриллаев, Kh. F. Zikrillaev, F. E. Urakova +4

    MaqolaSilicon and Solar Cell TechnologiesSurface Engineering and Applied Electrochemistry20250 iqtibos
    ABI

  12. First-principles study of cooperative GaP incorporation and defect clustering in silicon

    Shahzod Masharipov, Amin Saidov, U. P. Asatova +1

    Maqola20260 iqtibos
    ABI

  13. Quantum Chemical Calculations of Nanoclusters in Si 1‐x Ge x and (Si 2 ) 1‐x (GaP) x Solid Solutions and Their Influence on Epitaxial Growth

    Alijon Razzokov, Khushnudbek Eshchanov, Risolat Esomurodova

    Maqola20260 iqtibos
    ABI