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Ish: The Self-Heating Effect in Junctionless Fin Field-Effect Transistors Based on Silicon-on-Insulator Structures with Different Channel Shapes

1. A Comprehensive Study of the Impact of the Gate Oxide Material Composition on the Self-Heating Effect in Nanosheet Field Effect Transistor

   A. É. Atamuratov, D. R. Rajapov, M. M. Khalilloev +3

   MaqolaAdvancements in Semiconductor Devices and Circuit DesignSilicon20251 iqtibos

   ABIABI:AkademIndex/2025.article.001842

2. Combined Influence of Gate Oxide and Back Oxide Materials on Self-Heating and DIBL Effect in 2D MOS2-Based MOSFETs

   A. É. Atamuratov, Khushnudbek Sh. Saparov, Ahmed Yusupov +1

   MaqolaOAOchiq kirish2D Materials and ApplicationsApplied Sciences20231 iqtibos

   ABIABI:AkademIndex/2026.other.439504

3. Impact of source (drain) doping profiles and channel doping level on self-heating effect in FinFET

   A. É. Atamuratov, B. O. Jabbarova, M. M. Khalilloev +5

   MaqolaOAOchiq kirishAdvancements in Semiconductor Devices and Circuit DesignMicro and Nanostructures20240 iqtibos

   ABIABI:AkademIndex/2024.article.002170

4. Effect of Gate Oxide and Back Oxide Materials on Self-Heating Effect in FinFET

   M. M. Khalilloev, B. O. Jabbarova, F. Eshchanov +1

   MaqolaOAOchiq kirishSemiconductor materials and devicesEast European Journal of Physics20250 iqtibos

   ABIABI:AkademIndex/2025.article.009026

5. Impact of the gate oxide material composition on the self-heating and short channel effects in nanosheet field effect transistor

   A.E. Atamuratov, D. R. Rajapov, M. M. Khalilloev +2

   PreprintOAOchiq kirishAdvancements in Semiconductor Devices and Circuit DesignResearch Square20260 iqtibos

   ABIABI:AkademIndex/2026.preprint.001199