Ushbu ishga iqtibos qilgan ishlar

7 ta ish

Ish: Growth and Morphological Study of Graded-Gap Si–Si1 – xGex–GaAs Structures

1. Features of growing Si- and Si_1-<i>x</i>Ge_<i>x</i>-single-crystal films from solution-melt based on tin

   A. Sh. Razzokov, A.S. Saidov, V. V. Girzhon +1

   MaqolaOAOchiq kirishSilicon Nanostructures and PhotoluminescenceJournal of Physical Studies20226 iqtibos

   ABIABI:AkademIndex/2022.article.000838

2. Optical Properties of GexSi1 – x Binary Compounds in Silicon

   Н. Ф. Зикриллаев, Habibjon Kushiev, Shahzodbek I. Hamrokulov +1

   MaqolaOAOchiq kirishSemiconductor materials and interfacesJournal of Nano- and Electronic Physics20235 iqtibos

   ABIABI:AkademIndex/2023.article.002005

3. Studies of the crystal structure of solid solutions (Sn2)1−x−y(GaAs)x(ZnSe)y, (GaAs)1−x(ZnSe)x grown from liquid phase

   A. Sh. Razzokov, A.S. Saidov, B. Allabergenov +3

   MaqolaChalcogenide Semiconductor Thin FilmsJournal of Crystal Growth20234 iqtibos

   ABIABI:AkademIndex/2023.article.002347

4. Оbtaining and Electrophysical Properties of (Ge2)1 – x(GaAs)x Solid Solutions

   A. Sh. Razzokov, A.S. Saidov, D.E. Koshchanova +2

   Maqola20252 iqtibos

   ABIABI:AkademIndex/2026.other.864682

5. Formation of (Si2)1-x(GaP)x gradient composition solid solutions during growth from a tin solution-melt

   A. Sh. Razzokov, V. V. Girzhon, I. Shtablavyi

   MaqolaSilicon Nanostructures and PhotoluminescenceVacuum20250 iqtibos

   ABIABI:AkademIndex/2025.article.008005

6. Growing Ge1-xSnx solid solutions on Ge, GaAs substrates

   A. Sh. Razzokov, M.A. Shonazarova, J.A. Razzakov

   MaqolaOAOchiq kirish20250 iqtibos

   ABIABI:AkademIndex/2025.article.068239

7. Growth and structural study of the solid solution Si1−xGex (0 &lt; x &lt; 1)

   Alijon Shonazarovich RAZZOKOV, Serhii Ivanovych Petrushenko, Mateusz Fijalkowski +2

   MaqolaOAOchiq kirishSilicon Nanostructures and PhotoluminescenceJournal of Crystal Growth20260 iqtibos

   ABIABI:AkademIndex/2026.article.006586