Ushbu ishga iqtibos qilgan ishlar

6 ta ish

Ish: Features of growing Si- and Si_1-<i>x</i>Ge_<i>x</i>-single-crystal films from solution-melt based on tin

1. Formation of (Si2)1-x(GaP)x gradient composition solid solutions during growth from a tin solution-melt

   A. Sh. Razzokov, V. V. Girzhon, I. Shtablavyi

   MaqolaSilicon Nanostructures and PhotoluminescenceVacuum20250 iqtibos

   ABIABI:AkademIndex/2025.article.008005

2. Theoretical and experimental study of the structure of (Ge2)1–x–y(GaAs)x(ZnSe)y solid solution

   A. Sh. Razzokov, Khushnudbek Eshchanov, A.S. Saidov +4

   MaqolaOAOchiq kirish20250 iqtibos

   ABIABI:AkademIndex/2025.article.028398

3. Preparation and Structure of Solid Solutions (Ge2)1−x–y(GaAs)x(ZnSe)y

   A. Sh. Razzokov, V. V. Girzhon, D. E. Koshchanova

   BobSemiconductor materials and interfacesAdvances in Science, Technology & Innovation/Advances in science, technology & innovation20250 iqtibos

   ABIABI:AkademIndex/2025.chapter.000712

4. Growth and structural study of (Si2)1-x(GaP)x solid solution

   Amin Saidov, A. Sh. Razzokov, Shukrullo Usmonov +3

   Maqola20260 iqtibos

   ABIABI:AkademIndex/2026.article.067025

5. Growing Si–Si 1− x Ge x –(Ge 2 ) 1− y (GaAs) y structures in a single technological cycle

   Alijon S. Razzokov, С.И. Петрушенко, Mateusz Fijałkowski +1

   MaqolaOAOchiq kirish20260 iqtibos

   ABIABI:AkademIndex/2026.article.093420

6. Quantum Chemical Calculations of Nanoclusters in Si 1‐x Ge x and (Si 2 ) 1‐x (GaP) x Solid Solutions and Their Influence on Epitaxial Growth

   Alijon Razzokov, Khushnudbek Eshchanov, Risolat Esomurodova

   Maqola20260 iqtibos

   ABIABI:AkademIndex/2026.article.094136