Ushbu ish iqtibos qilgan ishlar

8 ta ish

Ish: Study of the critical angle of channeling of active metal ions through thin aluminum films

1. Optimum ion implantation and annealing conditions for stimulating secondary negative ion emission

   З. А. Исаханов, Z. E. Mukhtarov, Б. Е. Умирзаков +1

   MaqolaIon-surface interactions and analysisTechnical Physics201120 iqtibos

   ABIABI:AkademIndex/2011.article.000044

2. Electron spectroscopy of the nanostructures created in Si, GaAs, and CaF2 surface layers using low-energy ion implantation

   Б. Е. Умирзаков, Д. А. Ташмухамедова, D. M. Muradkabilov +1

   MaqolaSemiconductor materials and interfacesTechnical Physics201320 iqtibos

   ABIABI:AkademIndex/2026.other.253376

3. Obtaining of epitaxial films of metal silicides by ion implantation and molecular beam epitaxy

   Б. Е. Умирзаков, Д. А. Ташмухамедова, E.U. Boltaev +1

   MaqolaSemiconductor materials and interfacesMaterials Science and Engineering B200316 iqtibos

   ABIABI:AkademIndex/2003.article.000028

4. Analysis of profiles of atomic distribution over the depth of Si-Me free nanofilm systems

   Б. Е. Умирзаков, З. А. Исаханов, М. К. Рузибаева +2

   MaqolaSemiconductor materials and interfacesTechnical Physics20156 iqtibos

   ABIABI:AkademIndex/2026.other.495098

5. Study of the angular and energy distributions of Na+ and K+ ions which have passed through thin copper films

   З. А. Исаханов

   Maqola20132 iqtibos

   ABIABI:AkademIndex/2026.other.701523

6. Sarlavhasiz

   Boshqa2 iqtibos

   ABIABI:AkademIndex/2026.other.701524

7. Sarlavhasiz

   Boshqa2 iqtibos

   ABIABI:AkademIndex/2026.other.701525

8. Sarlavhasiz

   Boshqa2 iqtibos

   ABIABI:AkademIndex/2026.other.701526