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17 ta ish

Ish: PROCESSES OF DEFECT FORMATION IN SILICON DIFFUSIONALLY DOPED WITH PLATINUM AND IRRADIATED WITH PROTONS

  1. Influence of the parameters to transition capacitance at NCDS-PSI heterostructure

    I.B. Sapaev, Б. Сапаев, Diyorjon Àbdullaev +5

    MaqolaOchiq kirishChalcogenide Semiconductor Thin FilmsE3S Web of Conferences202317 iqtibos
    ABI

  2. Raman spectroscopy of silicon, doped with platinum and irradiated by protons

    Sharifa B. Utamuradova, Kh.S. Daliev, А. В. Станчик +1

    MaqolaOchiq kirishSilicon Nanostructures and PhotoluminescenceE3S Web of Conferences202311 iqtibos
    ABI

  3. X-Ray Structural Investigations Of n-Si<Pt> Irradiated with Protons

    Sharifa B. Utamuradova, А. В. Станчик, Dilmurod A. Rakhmanov

    MaqolaOchiq kirishSilicon and Solar Cell TechnologiesEast European Journal of Physics202310 iqtibos
    ABI

  4. Decay of Impurity Clusters of Nickel and Cobalt Atoms in Silicon under the Influence of Pressure

    N. A. Turgunov, Elmurod Kh. Berkinov, D. Kh. Mamajonova

    MaqolaOchiq kirishSilicon and Solar Cell TechnologiesJournal of Nano- and Electronic Physics202110 iqtibos
    ABI

  5. The Effect of Thermal Annealing on the Electrophysical Properties of Samples n-Si<Ni,Сu>

    N. A. Turgunov, Elmurod Kh. Berkinov, R.M. Turmanova

    MaqolaOchiq kirishSilicon and Solar Cell TechnologiesEast European Journal of Physics20239 iqtibos
    ABI

  6. Accumalations of impurity Ni atoms and their effect on the electrophysical properties of Si

    N. A. Turgunov, E.Kh. Berkinov, R.M. Turmanova

    proceedingOchiq kirish20238 iqtibos
    ABI

  7. Impedance spectroscopy studies of dual membrane fuel cell

    Daria Vladikova, Z. Stoynov, G. Raikova +7

    Maqola20113 iqtibos
    ABI

  8. The radiation-induced defects production in P-type silicon doped by impurities of transitional elements

    Marat S. Yunusov, M. Karimov, M. N. Alkulov +1

    MaqolaSilicon and Solar Cell TechnologiesRadiation effects and defects in solids20003 iqtibos
    ABI

  9. Sarlavhasiz

    Boshqa2 iqtibos
    ABI

  10. Influence of the Temperature and Cyclic Deformations of (BixSb1–x)2Te3 Films on Their Resistance

    Kh.S. Daliev, M. M. Ahmedov, M. K. Onarkulov

    MaqolaAdvanced Thermoelectric Materials and DevicesJournal of Engineering Physics and Thermophysics20212 iqtibos
    ABI

  11. Mechanisms for thermal stability of the electrophysical properties of overcompensated n-Si〈B, S〉

    Marat S. Yunusov, M. Karimov, P. A. Khalikov

    MaqolaSemiconductor materials and interfacesTechnical Physics Letters19991 iqtibos
    ABI

  12. Semiconductor detector as ionising radiation dosimeter

    Marat S. Yunusov, A. Akhmadaliev, K. A. Begmatov

    MaqolaRadiation Detection and Scintillator TechnologiesRadiation Physics and Chemistry19951 iqtibos
    ABI

  13. Sarlavhasiz

    Boshqa1 iqtibos
    ABI

  14. Sarlavhasiz

    Boshqa1 iqtibos
    ABI

  15. Sarlavhasiz

    Boshqa1 iqtibos
    ABI

  16. Sarlavhasiz

    Boshqa1 iqtibos
    ABI

  17. Sarlavhasiz

    Boshqa1 iqtibos
    ABI